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Electromagnetic modeling of non-uniform through-silicon via (TSV) interconnections

机译:非均匀硅穿孔(TSV)互连的电磁建模

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摘要

In this paper, a hybrid approach for electromagnetic modeling of complex tapered through-silicon via (TSV) in three dimensional integrated circuits (3D ICs) is proposed. For complex TSV structures, TSVs are divided vertically into conical and cylindrical sections. The modeling of conical TSV is presented based on using conical modal basis functions. By using the conical TSV modeling method combined with cylindrical TSV modeling method, complex TSV structures can be modeled efficiently. The accuracy of this hybrid method is validated by comparison with 3-D full-wave simulations.
机译:本文提出了一种在三维集成电路(3D IC)中对复杂的锥形硅通孔(TSV)进行电磁建模的混合方法。对于复杂的TSV结构,TSV在垂直方向上分为圆锥形部分和圆柱形部分。基于圆锥形模态基函数,提出了圆锥形TSV的建模。通过将圆锥形TSV建模方法与圆柱TSV建模方法结合使用,可以有效地建模复杂的TSV结构。通过与3-D全波仿真进行比较,可以验证这种混合方法的准确性。

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