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Preparation of Magnesium Hydroxide Film by Electrochemical Reaction

机译:电化学反应制备氢氧化镁薄膜

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摘要

Mg(OH)_2 films with hexagonal structure were grown on a conductive substrate by electrochemical deposition from a O.lmol/L magnesium nitrate aqueous solution kept at 323K. The crystal structure of these films corresponded to the hexagonal structure with the space group of P3ml as determined by using Rietveld analysis, regardless of the cathodic potential. The resistivity of Mg(OH)_2 films decreased with an increase in the cathodic potential. In particular, at the cathodic potential of-0.9V, Mg(OH)2 films had the resistivity as low as 1.1Ωcm. This film was composed of aggregates of triangular grains and had no defects such as pores and cracks.
机译:通过从保持在323K的0.1mol / L硝酸镁水溶液中进行电化学沉积,在导电基板上生长具有六边形结构的Mg(OH)_2膜。这些膜的晶体结构与通过Rietveld分析确定的具有P3ml的空间基团的六边形结构相对应,而与阴极电位无关。 Mg(OH)_2薄膜的电阻率随着阴极电位的增加而降低。特别地,在-0.9V的阴极电位下,Mg(OH)2膜的电阻率低至1.1Ωcm。该膜由三角形晶粒的聚集体组成,并且没有诸如孔和裂纹的缺陷。

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