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Preparation of Magnesium Hydroxide Film by Electrochemical Reaction

机译:电化学反应制备氢氧化镁膜

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Mg(OH)_2 films with hexagonal structure were grown on a conductive substrate by electrochemical deposition from a 0.1mol/L magnesium nitrate aqueous solution kept at 323K. The crystal structure of these films corresponded to the hexagonal structure with the space group of P3m1 as determined by using Rietveld analysis, regardless of the cathodic potential. The resistivity of Mg(OH)_2 films decreased with an increase in the cathodic potential. In particular, at the cathodic potential of -0.9V, Mg(OH)_2 films had the resistivity as low as 1.1Ωcm. This film was composed of aggregates of triangular grains and had no defects such as pores and cracks.
机译:通过从0.1mol / L硝酸镁水溶液中的电化学沉积在323K上通过电化学沉积在导电基板上生长六边形结构的Mg(OH)_2膜。通过使用Rietveld分析,无论阴极电位如何,这些膜的晶体结构与P3M1的空间组的六边形结构相对应。 Mg(OH)_2膜的电阻率随着阴极电位的增加而降低。特别地,在-0.9V的阴极电位,Mg(OH)_2薄膜的电阻率低至1.1Ωcm。该薄膜由三角形晶粒的聚集体组成,并且没有缺陷,例如孔隙和裂缝。

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  • 来源
    《ECS Meeting》|2012年||共6页
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    H. Ishizaki; S. Ito;

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  • 中图分类 TN304-53;
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