SOI-type Bonded Structures for Advanced Technology Nodes

摘要

Bulk silicon device technologies are reaching fundamental scaling limitations. The 28 nm and 22 nm technology nodes have seen the introduction of Ultra-Thin Body and Buried Oxide Fully Depleted SOI (UTBB-FDSOI) devices (1) and FinFETs (2), respectively. Fully Depleted transistor technologies are mandatory to suppress short channel effects. Today, all major research and development alliances state that the silicon and its Fully Depleted transistor technologies have the potential to address roadmap requirements down to the 10 nm node. Innovations will be necessary for lower, more advanced node (under 10 nm). Specifications are to continue to ensure a good electrostatic control while providing excellent electrical performance. To meet these demands, several research areas (substrate engineering as well as multiple gate devices and 3D integration) will be involved in integrated circuit fabrication. This paper reports our latest achievements in SOI-type bonded substrates for advanced technology nodes.