Low dislocation density, broad area, high power CW operated InGaN laser diodes

摘要

We fabricated wide-stripe laser diodes operating between 380 and 430 nm. The threshold current density for 380 and 430 nm devices (6-7 kA/cm~2) was only slightly higher than for our main stream 415 nm devices (4-6 kA/cm2). Thanks to the use of high-pressure-grown low-dislocation-density substrates we succeeded in demonstration of high power optical emission both under CW and pulse operation. For the device emitting at 415 nm we were able to demonstrate 200 mW of CW optical power (20 μm wide device) and 2.7 W under pulse current operation (peak power, 50 μm device). The main obstacle for achieving CW operation of 50 μm device was to remove the excess of heat from laser chip-diamond submount assembly.