Simulation of electronic transport in single nanobelt tin dioxide gas sensors

摘要

Chemical sensors based on tin dioxide metal-oxides have attracted much attention recently because of their high sensitivity, high selectivity, and easy integration which have a great potential to revolutionize the chemical and environmental sensing. Such sensors can relatively easily be built using FET structures and integrated in large network sensors for quantitative chemical detection. In this presentation we discuss our approach for the modeling and simulation of single nanobelt metal-oxide chemical sensors with FET structure. Experimental data is used to test the validity of our approach.