Optimization of power AlGaN/GaN vertical HEMT devices with low on-state resistance and high breakdown voltage

摘要

Recently [1,2] we have developed a numerical technique for the optimization of parameters in semiconductor devices. This technique allows the computation (“redesign”) of the doping profiles of most semiconductor devices such as MOSFETs and SOI transistors, in order to decrease (or increase) the values of given parameters of the device. In this presentation we show how to adjust this optimization technique to the minimization of the on-state resistance (Ron) in AlGaN/GaN vertical HEMT devices with high breakdown voltage (BV). The technique is based on the computation of doping sensitivity functions of Ron and BV and the minimization of Ron, in which the optimization variables are the values of the doping concentrations at each location inside the device. Constraints are taken into consideration by using the method of Lagrange multipliers.