Thermal effect on optical characteristics of packaged edge emitting laser diode with compressively strained multi-quantum well structure

摘要

Thermal effect on the device characteristics plays a critical role for its applications. In case of semiconductor distributed feedback (DFB) diode laser, because the gain bandwidth and the Bragg wavelength do not necessarily have the same responses to the environment temperature, we have to consider those properties for maintaining a stable single longitudinal mode (SLM) [1]. If the two wavelength shifts are not optimized, even though we were able to achieve single mode at certain temperatures by index Bragg grating, the DFB laser can suddenly appear lasing in multimodes by the Fabry-Perot (FP) cavity in any other thermal conditions. In this work, we have experimentally explored the optimum condition for our fabricated edge emitting laser diode at 1.55µm incorporating pseudomorphic compressively strain multi-qunantum well (MQW) with a transister-outlined (TO) package operating from −40°C to 85°C for acehiving stable single longitudinal mode. We have characterized the optical performance such as thershold current and slope efficiency as figures of merit of the device as well.