Gate bias characterization of CNT-TFT DNA sensors

摘要

There have been numerous reports of CNT-TFT DNA sensors in the literature [1–3]. This work follows the approach in references [1,3] that use the change in the current of CNT-TFTs with DNA attachment and DNA hybridization. In this work, we use the back-gated measurement geometry and employ no intercalating agents or Mg salt addition. The aim is to investigate the detailed response characteristics in the full range of CNT-TFT gate bias conditions.