LUMINESCENCE OF Ge/Si QUANTUM DOTS SUBJECTED TO RADIATION DAMAGE AND HYDROGEN PASSIVATION

摘要

Influence of proton irradiation and hydrogen passivation on the photoluminescence (PL) of MBE grown Ge/Si quantum dots (QDs) has been studied. An enhanced resistance of the QDs against irradiation as compared to the quantum wells and bulk silicon has been found. The passivation improves the thermal s tability of the QD luminescence whereas the irradiation reduces it. Various carrier/exciton redistribution processes among the PL centers and the influence of defects have been observed.