Fabrication and Gas Response Characteristics of Metal Semiconductor Nanostructures Grown by Ambient Pressure

摘要

SnO_2 nanowires and ZnO nanorods were grown on the surface of thin film by heat treatment of mental Sn and Zn under Ar gas flow and O_2 atmospheric pressure. The sensitivity of the SnO_2 thin film device on which grown nanowires to CO gas (concentration of 5 000 μg/g) was 50% at the operating temperature of 200 ℃. In case of using Pt as catalysts, the sensitivity was enhanced and operating temperature was reduced (sensitivity of 70 % at the operating temperature of 150℃). The sensitivity of the ZnO nanorods device using Cu as catalysts to NO_x gas was 90 % at the operating temperature of 200℃. It was found that the sensitivity to CO and NO_x gases for the device on which grown nanostructures was much higher than those for general thin films devices.