机译:在各种N_2O环境下4H-SiC上热生长氮化SiO_2薄膜的金属氧化物半导体特性
School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Seberang Perai Selatan, Penang, Malaysia;
rnDepartment of Materials Science and Engineering, Seoul National University, Seoul, 151-744, Republic of Korea;
Department of Materials Science and Engineering, Seoul National University, Seoul, 151-744, Republic of Korea;
rnIntegrated Power Supply Research Group, Advanced Materials & Application Research Division, Korea Electrotechnology Research Institute, P.O. Box 20, Changwon, Gyungnam 641-120, Republic of Korea;
Integrated Power Supply Research Group, Advanced Materials & Application Research Division, Korea Electrotechnology Research Institute, P.O. Box 20, Changwon, Gyungnam 641-120, Republic of Korea;
metal-oxide-semiconductor structure; nitridation; interface; X-ray photoelectron spectroscopy; electrical properties and measurements;
机译:在潮湿的O_2和N_2O环境中进行后氧化退火对p沟道MOS器件热生长的SiO_2 / 4H-SiC界面的影响
机译:N_2O中的硅热氧化生长的SiO_2:N薄膜中的电子传导
机译:Si和SiC上热生长SiO_2薄膜的金属氧化物半导体电容器中CO退火的影响
机译:在湿的O_2和N_2O环境中进行后氧化退火对p沟道MOS器件热生长的SiO_2 / 4H-SiC界面的影响
机译:热生长的GA2O3薄膜和纳米线及其装置应用
机译:在热生长的二氧化硅上沉积纳米柱优先取向的PSZT薄膜
机译:通过过滤的阴极真空弧沉积在晶体和氮硅基板上生长超薄非晶碳膜的热稳定性和扩散特性
机译:具有快速生长的超薄siO2栅极绝缘体的mOs(金属氧化物半导体)器件的界面和击穿特性。