首页> 外文会议>Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE >A reconfigurable 4.7–6.6GHz and 8.5–10.7GHz concurrent and dual-band oscillator in 65nm CMOS
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A reconfigurable 4.7–6.6GHz and 8.5–10.7GHz concurrent and dual-band oscillator in 65nm CMOS

机译:一个可重配置的4.7–6.6GHz和8.5–10.7GHz并发和双频段振荡器,采用65nm CMOS

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A triple-mode 65nm CMOS VCO is designed to be reconfigurable to operate in two frequency bands, 4.7–6.6GHz and 8.5–10.7GHz, either concurrently or one at a time. Operated concurrently in the lower and higher bands, the VCO consumes 1.6mA at 1.2V and measures tuning ranges of 35%/23%, phase noise of −130/−128dBc/Hz at 10-MHz offset, corresponding to FOMs of −184/187dB, respectively. Operated in the lower and higher bands one at a time, the VCO consumes 0.75mA/1.43mA at 1.2V with tuning ranges of 34%/23% and phase noise of −131/−128dBc/Hz at 10-MHz offset, which correspond to FOMs of −186dB and −185dB, respectively.
机译:三模65nm CMOS VCO设计为可重新配置为在4.7–6.6GHz和8.5–10.7GHz两个频带中同时运行或一次运行。 VCO在较低和较高频段上同时工作,在1.2V电压下消耗1.6mA电流,并测量35%/ 23%的调谐范围,在10MHz偏移下的相位噪声为-130 / -128dBc / Hz,对应于-184的FOM。 / 187dB。 VCO一次在较低频段和较高频段工作,在1.2V电压下消耗0.75mA / 1.43mA电流,调谐范围为34%/ 23%,在10MHz偏移时的相位噪声为-131 / -128dBc / Hz。分别对应于-186dB和-185dB的FOM。

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