首页> 外文会议>Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE >A 2.45GHz ultra-low power quadrature front-end in 65nm CMOS
【24h】

A 2.45GHz ultra-low power quadrature front-end in 65nm CMOS

机译:采用65nm CMOS的2.45GHz超低功耗正交前端

获取原文
获取原文并翻译 | 示例

摘要

This paper presents a 2.45GHz ultra-low power direct conversion receiver front-end, intended for applications such as medical implants and body area networks. It consists of low noise amplifier, passive quadrature mixers, voltage controlled oscillator and frequency divider. Manufactured in 65nm CMOS it achieves 27dB gain, 9dB noise figure and S11 better than −14dB, while consuming below 400µW from a 0.8V supply. It has an in band and out of channel IIP3 of −24.5 and −21dBm, repectively. Requiring only two inductors it occupies an area of less than 0.1 mm2 excluding pads.
机译:本文介绍了一种2.45GHz超低功率直接转换接收机前端,旨在用于医疗植入物和人体局域网等应用。它由低噪声放大器,无源正交混频器,压控振荡器和分频器组成。它采用65nm CMOS制造,可实现27dB的增益,9dB的噪声系数和优于-14dB的S11,同时在0.8V电源下的功耗低于400µW。它的带内和带外通道IIP3分别为-24.5和-21dBm。仅需要两个电感器,除焊盘外,其面积就小于0.1 mm 2

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号