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CLASS AB POWER AMPLIFIER EMPLOYING ULTRA-LOW VOLTAGE CMOS

机译:采用超低压CMOS的AB类功率放大器

摘要

PROBLEM TO BE SOLVED: To provide class AB power amplifier employing an ultra-low voltage CMOS for applications with small load impedance, which utilizes gate-source parasitic capacitance of a device for the compensation capacitance.;SOLUTION: The class AB power amplifier is provided with a PMOS output transistor(TR) having the gate driven by a PMOS drive TR in response to a noninverting input signal and an NMOS output TR having the gate driven by an NMOS drive TR in response to an inverting input signal, builds up a class AB output stage by the above TRs and selectively combines the gate- source parasitic capacitance of the PMOS output TR and the gate-source parasitic capacitance of the NMOS output TR in order to utilize a prescribed gate- source parasitic capacitance as the compensation capacitance.;COPYRIGHT: (C)2002,JPO
机译:解决的问题:要提供具有超低电压CMOS的AB类功率放大器,以用于负载阻抗较小的应用,它利用器件的栅源寄生电容作为补偿电容。;解决方案:提供了AB类功率放大器具有响应于同相输入信号而具有由PMOS驱动器TR驱动的栅极的PMOS输出晶体管(TR)和具有响应于反相输入信号而具有由NMOS驱动器TR驱动的栅极的NMOS输出TR,构成了一个AB输出级由上述TR构成,并有选择地组合PMOS输出TR的栅极-源极寄生电容和NMOS输出TR的栅极-源极寄生电容,以利用规定的栅极-源极寄生电容作为补偿电容。版权:(C)2002,日本特许厅

著录项

  • 公开/公告号JP2002198752A

    专利类型

  • 公开/公告日2002-07-12

    原文格式PDF

  • 申请/专利权人 TEXAS INSTRUMENTS INC;

    申请/专利号JP20010339642

  • 发明设计人 MUZA JOHN M;

    申请日2001-11-05

  • 分类号H03F3/30;H03F1/34;

  • 国家 JP

  • 入库时间 2022-08-22 00:59:14

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