Department of Electronics Engineering, Indian School of Mines, Dhanbad, India-826004;
Department of Electronics Engineering, Indian School of Mines, Dhanbad, India-826004;
Quantum dot; Intraband transition; Anisotropy; Polarization-sensitive; Quantum efficiency; Optical gain; Photocurrent; Dark current;
机译:高性能雪崩量子点光电探测器,用于中红外探测
机译:δ掺杂对Ge / Si量子点中红外光电探测器性能的影响
机译:高性能中红外量子点红外光电探测器
机译:各向异性量子点极化敏感中红外光电探测器的性能分析
机译:多色量子点和量子环子级间光电探测器,用于中红外和太赫兹探测。
机译:δ掺杂对Ge / Si量子点中红外光电探测器中空穴捕获概率的影响
机译:高性能中红外量子点红外光电探测器
机译:具有屏障限制光电子捕获的灵敏量子点红外光电探测器。