Sensitive Quantum-Dot Infrared Photodetector with Barrier-Limited Photoelectron Capture.

摘要

Our research on quantum-dot infrared photodetectors has been concentrated on increasing of photoconductive gain and responsivity. Innovative idea in design of sensitive quantum-dot infrared photodetector is to use a structure with quantum dots surrounded by repulsive potential barriers, which are created due to interdot doping. Spatial separation of the localized ground state and continuum conducting states of the electron increases significantly the photoelectron capture time and photoconductive gain. Large value of the gain results in high responsivity, which in turn improves detectivity and raises the device operating temperature.