Integrated Optoelectronics and Microoptics Research Group, Physics Department, Kaiserslautern University of Technology, P.O. Box 3049, D-67653 Kaiserslautern, Germany;
Integrated Optoelectronics and Microoptics Research Group, Physics Department, Kaiserslautern University of Technology, P.O. Box 3049, D-67653 Kaiserslautern, Germany;
Integrated Optoelectronics and Microoptics Research Group, Physics Department, Kaiserslautern University of Technology, P.O. Box 3049, D-67653 Kaiserslautern, Germany;
Integrated Optoelectronics and Microoptics Research Group, Physics Department, Kaiserslautern University of Technology, P.O. Box 3049, D-67653 Kaiserslautern, Germany;
Integrated Optoelectronics and Microoptics Research Group, Physics Department, Kaiserslautern University of Technology, P.O. Box 3049, D-67653 Kaiserslautern, Germany;
Integrated Optoelectronics and Microoptics Research Group, Physics Department, Kaiserslautern University of Technology, P.O. Box 3049, D-67653 Kaiserslautern, Germany;
Ga(As)Sb quantum dots; laser; AlGaAs barrier; intermediate layer; reflectance anisotropy spectroscopy (RAS);
机译:使用AlGaAs-AlGaP中间层通过有机金属化学气相沉积在硅上进行AlGaAs-GaAs单量子阱激光器的室温连续波操作
机译:AlGainAs覆盖层对AlGaAs / GaAs量子孔的发射和结构具有InAs量子点的影响
机译:使用GaAs胶囊层的Al-Rich AlgaAs上的光电活性GA(AS)Sb量子点的外延生长
机译:通过GaAs中间层高效Ga(AS)SB量子点发射
机译:钙钛矿太阳能电池的制造与表征inaS / GaAs量子点太阳能电池中间带概念的挑战
机译:掺杂的自组装InAs / InGaAs / GaAs / AlGaAs量子点中应变相关的光吸收的理论研究
机译:使用GaAs胶囊层的Al-Rich AlgaAs上的光电活性GA(AS)Sb量子点的外延生长
机译:正常入射高性能p型应变层InGaas / alGaas和Gaas / alGaas量子阱红外光电探测器的研究