Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada;
Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada;
Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada;
Department of Physics, Simon Fraser University, 8888 University Drive, Burnaby, British Columbia V5A 1S6, Canada;
Department of Physics, Simon Fraser University, 8888 University Drive, Burnaby, British Columbia V5A 1S6, Canada;
Department of Physics, Simon Fraser University, 8888 University Drive, Burnaby, British Columbia V5A 1S6, Canada;
Department of Physics, Simon Fraser University, 8888 University Drive, Burnaby, British Columbia V5A 1S6, Canada;
InN nanowires; intrinsic; p-type; surface charge properties;
机译:Si(111)衬底上无催化剂的InN / In_xGa_(1-x)N核/壳纳米线异质结构的分子束外延生长和表征
机译:Si(111)上非锥形InN纳米线的分子束外延生长和表征
机译:(0001)蓝宝石上InN外延膜的射频-分子束外延生长及其性能
机译:InN / Si纳米线异质结太阳能电池的分子束外延生长,制备和表征
机译:分子束外延生长和氮化物纳米线的表征。
机译:分子束外延法原位外延生长石墨烯/ h-BN范德华异质结构
机译:Bi2Se3纳米线和纳米薄片的分子束外延生长