Inductor Modeling Using 3D EM Design Tool for RF CMOS Process

摘要

This study formulates an RF IC design flow integrating the use of 3D Electro-Magnetic (EM) design tool for inductor modeling. The 3D EM tool was used to extract the S-parameters that will be subsequently used as RF model for the on-chip spiral inductors in RF IC simulations. The physical layers of the CMOS process were modeled into the ASITIC 2D 1/2 tool by creating a user defined technology file (.tek), and into the 3D EM tool by CAD-supported physical geometric construction. Inductance values were chosen and geometric definitions of the inductors were determined. Comparisons were made between the gathered data from a previous on-chip implementation to the data gathered from the 3D EM tool, S-parameters, quality factor (Q), and the inductances versus frequency measurements were recorded. Implementation was done for a 0.25 micron CMOS process.