EFFECT OF MICROWAVE PLASMA PROCESS CONDITIONS ON NANOCRYSTALLINE DIAMOND DEPOSITION ON AlCiaN/GaN HEMT AND Si DEVICE METALLIZATIONS

摘要

Thermal management plays a critical role in the continued development of modern microelectronics and high power electronics technology. This paper lays the foundation for the development of microwave plasma nanoerystalline diamond (NCD) based thermal interface materials for AlGaN/GaN High Electron Mobility Transistors (HEMTs). NCD is deposited, using Ar-rich microwave plasmas, on AlGaN/GaN HEMTs and Si devices with no visible damage to device metallization. Raman spectroseopy, optical and scanning electron microscopy are used to evaluate the quality of the NCD films. Results indicate that no visible damage occurs to the device metallization for temperatures below 290 ℃ for Si devices and below 320 ℃ for the AlGaN/GaN HBMTs. Possible mechanisms for metallization damage above the deposition temperature are enumerated. Electrical testing of the AlGaN/GaN HEMTs indicates that it is indeed possible to deposit NCD on GaN-based devices with no significant degradation in device performance.