VAPOUR PRESSURE MEASUREMENT OF TECHNOLOGICALLY IMPORTANT PRECURSORS

摘要

The interest in fabricating new material layer structures or coatings by vapour phase techniques has led to the consideration of a range of new precursors for which basic volatility properties are not available. In this paper we report the data obtained on vapour pressure measurement equipment specifically designed for the accurate characterisation of these compounds. In particular it has been found that sample preparation and system operating parameters are key to obtaining reliable data. Measurement during several increasing and decreasing temperature ramps has been found necessary to ensure sample degassing and or degradation does not affect the final results. The actual compounds studied include Hafnium, Tantalum and Ruthenium sources suited to Metalorganic Chemical Vapour Deposition (MOCVD) and also Atomic Layer Deposition (ALD).