ATMOSPHERIC PRESSURE GLOW DISCHARGE CVD OF TiO_2 THIN FILMS

摘要

The poster illustrates recent progress in the use of an atmospheric pressure glow discharge CVD (AP GDCVD) system to produce dense, uniform, amorphous TiO_2 thin films on barrier glass, sub-stoichiometric films were produced while film stoichiometry could be improved by post growth treatment in the glow discharge system in the presence of O_2. The possible incorporation of N-doping into TiO_2 during APGDCVD growth has been examined. Preliminary results suggest that addition of NH_3 to the plasma process gas results in N incorporation at significant levels (ca.5 atomic percent). Post growth treatment in He/NH_3 plasma also appears to result in N-incorporation, but at significantly lower levels (ca.3 atomic percent). Results are discussed in terms of possible applications of AP GDCVD- grown TiO_2 coatings.