MECHANISMS OF LOW-TEMPERATURE WAFER BONDING

摘要

The generation of defects (bubbles) in the interface of wafer pairs bonded by low-temperature bonding techniques was investigated. Statistical analyses of the size and distance distribution were used to describe the growth and dissolution mechanisms in different temperature ranges.rnInterfaces of wafer pairs pre-treated in a low-pressure plasma or by a DBDrnprocess are characterized by lower bubble concentrations compared to wafer pairs bonded without a pre-treatment. This means that such bonded interfaces contain a lower amount of molecular water even at temperatures below 300℃. It is assumed that the water is strongly polarized in this temperature range and therefore increases the number of silanol bonds across the interface.