MECHANISMS OF LOW-TEMPERATURE WAFER BONDING

摘要

The generation of defects (bubbles) in the interface of wafer pairs bonded by low-temperature bonding techniques was investigated. Statistical analyses of the size and distance distribution were used to describe the growth and dissolution mechanisms in different temperature ranges. Interfaces of wafer pairs pre-treated in a low-pressure plasma or by a DBD process are characterized by lower bubble concentrations compared to wafer pairs bonded without a pre-treatment. This means that such bonded interfaces contain a lower amount of molecular water even at temperatures below 300℃. It is assumed that the water is strongly polarized in this temperature range and therefore increases the number of silanol bonds across the interface.