IMPLANTATION TEMPERATURE EFFECT ON THE DEFECT PROFILE IN HYDROGEN IMPLANTED INP

摘要

The effect of implantation temperature during hydrogen implantation into InP is investigated for a dose of 5 x 10~(16) H_2~+/cm~2 at an energy of 150 keV. For material implanted at room temperature without controlled cooling, significant heating during the implantation prevented blistering during a subsequent exfoliation annealing step. Additionally, the damage profile observed by transmission electron microscopy in the un-cooled sample extends from the projected range to the surface of the substrate. In contrast, the implant damage and defects of InP cooled to -20℃ are well confined to a single layer at the projected range with a thickness of about 150 nm. This tightly confined damage distribution is believed to be able to trap more effectively the hydrogen allowing greater coalescence of platelet defects. The successful exfoliation of Ⅲ-Ⅴ materials is more sensitive to implant conditions than in the case of Si possibly due to the significantly lower thermal conductivity in Ⅲ-Ⅴs.