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Finite volume analysis of temperature effects induced by active MRI implants: 2. Defects on active MRI implants causing hot spots

机译:主动MRI植入物引起的温度效应的有限体积分析:2.主动MRI植入物引起热点的缺陷

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摘要

BackgroundActive magnetic resonance imaging implants, for example stents, stent grafts or vena cava filters, are constructed as wireless inductively coupled transmit and receive coils. They are built as a resonator tuned to the Larmor frequency of a magnetic resonance system. The resonator can be added to or incorporated within the implant. This technology can counteract the shielding caused by eddy currents inside the metallic implant structure. This may allow getting diagnostic information of the implant lumen (in stent stenosis or thrombosis for example). The electro magnetic rf-pulses during magnetic resonance imaging induce a current in the circuit path of the resonator. A by material fatigue provoked partial rupture of the circuit path or a broken wire with touching surfaces can set up a relatively high resistance on a very short distance, which may behave as a point-like power source, a hot spot, inside the body part the resonator is implanted to. This local power loss inside a small volume can reach ¼ of the total power loss of the intact resonating circuit, which itself is proportional to the product of the resonator volume and the quality factor and depends as well from the orientation of the resonator with respect to the main magnetic field and the imaging sequence the resonator is exposed to.
机译:背景技术有源磁共振成像植入物,例如支架,支架移植物或腔静脉滤器,被构造为无线感应耦合的发射和接收线圈。它们被构建为调谐到磁共振系统的拉莫尔频率的谐振器。谐振器可以被添加到植入物中或结合到植入物中。该技术可以抵消由金属植入物结构内部的涡流引起的屏蔽。这可以允许获得植入物内腔的诊断信息(例如在支架狭窄或血栓形成中)。磁共振成像期间的电磁rf脉冲在谐振器的电路路径中感应出电流。由材料疲劳引起的电路路径部分断裂或具有接触表面的断线可能会在很短的距离上形成相对较高的电阻,这可能会成为人体内部点状电源,热点将谐振器植入其中。小体积内部的局部功率损耗可能会达到完整谐振电路总功率损耗的1/4,这本身与谐振器体积与品质因数的乘积成比例,并且还取决于谐振器相对于谐振器的方向。谐振器所暴露的主磁场和成像序列。

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