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首页> 外文期刊>BioMedical Engineering OnLine >Finite volume analysis of temperature effects induced by active MRI implants with cylindrical symmetry: 1. Properly working devices
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Finite volume analysis of temperature effects induced by active MRI implants with cylindrical symmetry: 1. Properly working devices

机译:圆柱对称的有源MRI植入物引起的温度效应的有限体积分析:1.正确工作的设备

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Background Active Magnetic Resonance Imaging implants are constructed as resonators tuned to the Larmor frequency of a magnetic resonance system with a specific field strength. The resonating circuit may be embedded into or added to the normal metallic implant structure. The resonators build inductively coupled wireless transmit and receive coils and can amplify the signal, normally decreased by eddy currents, inside metallic structures without affecting the rest of the spin ensemble. During magnetic resonance imaging the resonators generate heat, which is additional to the usual one described by the specific absorption rate. This induces temperature increases of the tissue around the circuit paths and inside the lumen of an active implant and may negatively influence patient safety. Methods This investigation provides an overview of the supplementary power absorbed by active implants with a cylindrical geometry, corresponding to vessel implants such as stents, stent grafts or vena cava filters. The knowledge of the overall absorbed power is used in a finite volume analysis to estimate temperature maps around different implant structures inside homogeneous tissue under worst-case assumptions. The "worst-case scenario" assumes thermal heat conduction without blood perfusion inside the tissue around the implant and mostly without any cooling due to blood flow inside vessels. Results The additional power loss of a resonator is proportional to the volume and the quality factor, as well as the field strength of the MRI system and the specific absorption rate of the applied sequence. For properly working devices the finite volume analysis showed only tolerable heating during MRI investigations in most cases. Only resonators transforming a few hundred mW into heat may reach temperature increases over 5 K. This requires resonators with volumes of several ten cubic centimeters, short inductor circuit paths with only a few 10 cm and a quality factor above ten. Using MR sequences, for which the MRI system manufacturer declares the highest specific absorption rate of 4 W/kg, vascular implants with a realistic construction, size and quality factor do not show temperature increases over a critical value of 5 K. Conclusion The results show dangerous heating for the assumed "worst-case scenario" only for constructions not acceptable for vascular implants. Realistic devices are safe with respect to temperature increases. However, this investigation discusses only properly working devices. Ruptures or partial ruptures of the wires carrying the electric current of the resonance circuits or other defects can set up a power source inside an extremely small volume. The temperature maps around such possible "hot spots" should be analyzed in an additional investigation.
机译:背景技术有源磁共振成像植入物被构造为调谐到具有特定场强的磁共振系统的拉莫尔频率的谐振器。谐振电路可以被嵌入或添加到普通的金属植入物结构中。谐振器建立了感应耦合的无线发射和接收线圈,可以放大金属结构内部通常由涡流减小的信号,而不会影响其余的自旋系综。在磁共振成像期间,谐振器会产生热量,这是比吸收率所描述的常见热量的补充。这会引起活动路径周围和活动植入物内腔内组织的温度升高,并可能对患者的安全产生负面影响。方法该研究概述了具有圆柱形几何形状的有源植入物吸收的补充能量,该植入物对应于血管植入物,例如支架,支架移植物或腔静脉滤器。在有限体积分析中,将使用总吸收功率的知识来估计在最坏情况下假设下均质组织内部不同植入物结构周围的温度图。 “最坏情况”假设没有在植入物周围的组织内部进行血液灌注,并且由于血管内部的血液流动而几乎没有任何冷却的热传导。结果谐振器的额外功率损耗与体积和品质因数,MRI系统的场强以及所施加序列的比吸收率成正比。对于正常工作的设备,在大多数情况下,有限体积分析显示在MRI研究期间仅可忍受加热。只有将几百兆瓦转换成热量的谐振器才能达到5 K以上的温度升高。这需要谐振器的体积为几十立方厘米,电感电路路径短而只有几10 cm,并且品质因数大于10。使用MRI系统制造商宣布的最高比吸收率MR序列,具有实际构造,尺寸和品质因数的血管植入物不会显示温度升高超过5 K的临界值。结论结果表明对于假定的“最坏情况”,仅在不适合血管植入物的结构中进行危险加热。现实的设备对于温度升高是安全的。但是,此调查仅讨论正常工作的设备。承载谐振电路电流的导线的断裂或局部断裂或其他缺陷可在极小的体积内建立电源。应该在其他调查中分析此类可能的“热点”周围的温度图。

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