ANALYSIS OF TRASFER MECHANISM IN SURFACE FREE TECHNOLOGY BY LASER ANNEALING / ABLATION (SUFTLA™)

摘要

We developed a new technology which we have named SUFTLA™. This technology enables the transfer of thin film devices from an original substrate to another substrate. An a-Si film exfoliation layer is deposited on an original substrate, upon which thin film devices consisting of low-temperature processed polycrystalline-silicon thin film transistors (poly-Si TFTs) are subsequently fabricated. After the completion of thin film devices, an XeCl excimer laser irradiates the exfoliation layer from the back side of the original substrate, causing the exfoliation layer to melt and release hydrogen. The evaporation pressure reduces the adhesion between the exfoliation layer and substrate. In addition, the number of dangling bonds is increased and a large number of voids are generated in the exfoliation layer. This phenomenon also reduces the adhesive force and adhesive area. As a result, the transfer of thin film devices can be accomplished from an original substrate to another substrate.