SIMS DEPTH PROFILING OF B AND AS IMPLANTS IN SI_(1-x)GE_x AND STRAINED SI/SI_(1-x)GE_x

摘要

B and As implants in strained Si or SiGe were studied using secondary ion mass spectrometry (SIMS). Sputter rate and ion yield variations in the different matrices (strained Si vs. SiGe) led to small errors in the dopant profiles. The accuracy of the depth profiles was improved by correcting the sputter rates and ion yields as a function of the Ge content throughout the depth profile. In addition efforts to improve the SIMS detection limit for As in SiGe was explored using various secondary ion species, with and without background subtraction.