ON THE INFLUENCE OF NITROGEN AND CARBON ON THE FORMATION OF DISLOCATIONS IN HEAVILY DOPED SILICON WAFERS

摘要

200mm antimony doped substrates with an epi layer exhibit a very small bulk micro defect (BMD) density after device manufacturing. Adding nitrogen and carbon during crystal growth makes the BMD density increase by two orders of magnitude. Furthermore the wafers become more robust against slip formation under non-optimum hot process conditions which results in a better yield. However, the high BMD level can also cause yield disadvantages.