The DX-cenetre assisted quenching of persistent photoconductivity by high electric fields in GaAs delta-doped by Sn on vicinal substrate structures

机译：DX Cenetre通过在相邻衬底结构上掺Sn的GaAsδ掺杂的GaAs中的高电场来辅助淬灭持久的光电导

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We report the measurements of high electric field quenching of the persistent photoconductivity in delta-doped by Sn on vicinal substrate GaAs structures. Transport properties of the hot 2D electrons have been measured in the temperature range 4.2 K

机译：我们报告了在邻近衬底GaAs结构上由Sn掺杂的δ掺杂中持久光电导的高电场淬灭的测量结果。在4.2 K

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《Proceedings of the Twenty-Third International Symposium on Compound Semiconductors held in St Petersburg, Russia, 23-27 September 1996》|1996年|p.121-124|共4页
会议地点 St. Petersburg(RU);St. Petersburg(RU)
作者
V.A.Kulbachinskii; R.A.Lunin; V.G.Kytin; E.V.Bogdanov; A.S.Bugaev; A.P.Senickin;
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正文语种 eng
中图分类无线电电子学、电信技术;
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专利

1. Peculiarities of conductivity in structures delta-doped by Si on vicinal (111)A GaAs substrate [J] . Kulbachinskii VA., Galiev GB., Mokerov VG., Physica, E. Low-dimensional systems & nanostructures . 2003,第1a4期

机译：（111）A GaAs基体上Siδ掺杂的结构中电导率的特殊性
2. Piezoelectric fields in strained (In,Ga)As/GaAs multiple-quantum-well structures grown on vicinal (110) GaAs [J] . Sun D., Towe E. IEEE Journal of Quantum Electronics . 1994,第2期

机译：在邻近（110）GaAs上生长的（In，Ga）As / GaAs多量子阱结构中的压电电场
3. Wavelength dependent negative and positive persistent photoconductivity in Sn δ-doped GaAs structures [J] . V A Kulbachinskii, V G Kytin, A V Golikov Semiconductor science and technology . 2000,第9期

机译：Snδ掺杂GaAs结构中与波长有关的负和正持久光电导
4. The DX-cenetre assisted quenching of persistent photoconductivity by high electric fields in GaAs delta-doped by Sn on vicinal substrate structures [C] . V.A.Kulbachinskii, R.A.Lunin, V.G.Kytin, International symposium on compound semiconductors . 1997

机译：在邻底结构上通过SN的GaAsδ-掺杂的高电场辅助淬火淬火淬火光电导性
5. Optoelectronic devices based on low threshold strained InGaAs/GaAs quantum well lasers grown on structured substrates [D] . Frateschi, Newton Cesario 1993

机译：基于在结构化衬底上生长的低阈值应变InGaAs / GaAs量子阱激光器的光电器件
6. Photoconductivity Relaxation Mechanisms of InGaAs/GaAs Quantum Dot Chain Structures [O] . Serhiy V. Kondratenko, Sviatoslav A. Iliash, Oleg V. Vakulenko, 2017

机译：InGaAs / GaAs量子点链结构的光电导弛豫机理
7. Temporal development of electric field structures in photoconductive GaAs switches [O] . K. H. Schoenbach, J. S. Kenney, F. E. Peterkin, 1993

机译：光电导GaAs开关中电场结构的时间开发

The DX-cenetre assisted quenching of persistent photoconductivity by high electric fields in GaAs delta-doped by Sn on vicinal substrate structures

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