首页> 外文会议>Proceedings of the Twenty-Third International Symposium on Compound Semiconductors held in St Petersburg, Russia, 23-27 September 1996 >Defect study on the strain-relaxed In_xAl_(1-x)As epilayers (x<0.4) grown on GaAs

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Defect study on the strain-relaxed In_xAl_(1-x)As epilayers (x<0.4) grown on GaAs

机译：在GaAs上生长应变松弛的In_xAl_（1-x）As外延层（x <0.4）的缺陷研究

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摘要

Defects in SI-doped In_xAl_(1-x)As (0

机译：用Depp级瞬态光谱系统地研究了GaAs衬底上掺有SI的In_xAl_（1-x）As（0

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《Proceedings of the Twenty-Third International Symposium on Compound Semiconductors held in St Petersburg, Russia, 23-27 September 1996》|1996年|p.953-956|共4页
会议地点 St. Petersburg(RU);St. Petersburg(RU)
作者
Jia-Lin SHieh; Mao-Nan Chang; Yung-Shih Cheng; Jen-Inn Chyi;
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正文语种 eng
中图分类无线电电子学、电信技术;
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2. Strain relaxation in convex-graded In_xAl_(1-x)As (x = 0.05-0.79) metamorphic buffer layers grown by molecular beam epitaxy on GaAs(001) [J] . V.A. Solov’ev, M. Yu Chernov, M.V. Baidakova, Superlattices and microstructures . 2018,第JANa期

机译：GaAs（001）上分子束外延生长的凸渐变In_xAl_（1-x）As（x = 0.05-0.79）变质缓冲层中的应变弛豫
3. Structural and electrical properties of high-quality 0.41 μm-thick InSb films grown on GaAs (1 0 0) substrate with In_xAl_(1-x)Sb continuously graded buffer [J] . Sang Hoon Shin, Jin Dong Song, Ju Young Lim, Materials Research Bulletin . 2012,第10期

机译：在具有In_xAl_（1-x）Sb连续梯度缓冲液的GaAs（1 0 0）衬底上生长的高质量0.41μm厚InSb膜的结构和电学性质
4. Defect study on the strain-relaxed In_xAl_(1-x)As epilayers (x<0.4) grown on GaAs [C] . Jia-Lin SHieh, Mao-Nan Chang, Yung-Shih Cheng, International symposium on compound semiconductors . 1997

机译：在GaAs上生长的缺陷in_xal_（1-x）作为缺陷的in_xal_（1-x）研究
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