Dispersion of bulk excition polaritons in a GaAs microcavity

摘要

Dispersion of two-dimensional exciton polaritons in a semiconductor microcavity containing bulk exitons in a cnetral lyer has been considered using the transfer matrix techniques and Pekar's additional boundary conditions. SOlving dispersion equations for Te and TM polarized light modes we have obtained angle-dependent complex self-energies of eigen polariton states, which have been compared with frequencies of resonant features in the calculated spectra Dispersion of cavity polaritons has been found to have a shape of multiple anticrossings.