High-resolution raman study of (001) n-GaP-GaP and n-GaP-Si

摘要

We present the results of high resolution (0.06 cm~(-1) chemical bounds 7.5 mu eV) Raman scattering study of homopeitaxial n-GaP layers grown on (001) n-GaP substrate and neteroepitaxial n-GaP layers directly grown on (001) n-Si substrate by chloride vapor phase epitaxy. The observation of dipole-allowed LO-phonon-plasmon mode shows indications of possible Si atom interdiffusion at the (001) n-GaP-Si interface which seem to be a common problem not dependent on different grwoth techniques used including MBE growth.