Gas-source molecular beam epitaxy of GaN on SIMOX(111) substrates using hydraxine

摘要

Epitaxial gallium itride layers of approx 0.5 mu m thick on (111) SIMOX(Si-SiO_2-Si) substrates have been grown by gaspsource molecular beam epitaxy (GSMBE) using a hydrazine (N_2H_4) as a nitrogen source. Thin (20/40nm) GaAs layer was deposited on silicon surface and then was nitrided under hydrazine flux before GaN film growing at substrate temperature T_a of 550-600 deg C. The structural quality and optical properties of GaN/SIMOX films have been characterized by X-ray diffractioon (SRD) and cathodoluminescence (CL), respectively. It is found that increase in the N_2H_4/Ga fluxes ratio at growing surface results in the shift of CL near-edge emission peak to the longer wavelength spectral region.