All-optical modulation near 1.55 mu m using In_(1-x-y)Ga_xAl_yAs coupled quantum wells

摘要

Strain-balanced InGaAs/InGaAlAs coupled multi-quantum well (MQW) structures are investigated for use in near infra-red all-optical modulators. Magnetoabsorphtion and photocurrent measurements demonstrate the effects of strain on the band structure. The near coincidence of the first heavy and light hole levels in a tensile strained structure is shown to result imn an enhanced response in the photomodulated transmission when compared with a compressively strained structure.