We report on recent experiments investigating the modification of the interband optical response of a piezoelectric semiconductor quantum well structure under the influence of intense short period surface acoustic waves. Experimentally, we study the photoluminescence (PL) of an undoped strained InGaAs/GaAs quantum well on which surface acoustic waves are propagated in the GHz regime. We observe a pronounced influence on the PL, both in intensity as well as in energetic position:P Above a critical acoustic power density and corresponding lateral piezoelectric field strength, we observe a quenching of the excitions resulting in a strong decrease of the PL intensity. Using two transducers in a cavity resonator geometry, we can create a standing surface acoustic wave and hence control the nature and efficiency o f the acoustic transport of the photoexcited electrons and holes.
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