Pulse photoluminescence of proous 6H-SiC films

摘要

Photoluminescence from porous 6H-SiC films was studied. The porous films were obtained by electrochemical anodization of (0001)-oriented n-type conduction 6H-SiC wafers in HF-ethanol sol9ution. The photoluminescence spectra are measured with excitation by CW-radiation of Ar_2 laser and pulsed radiation of N_2 laser at the temperatures 80 and 300 K. The photoluminescence intensity of porous films was in 20 times as large as in the as-grown single crystals. The photoluminescence spectra of porous films are formed at least by three bands with the peak energies about 2.2, 2.6 and 2.8 eV. We can not confirm at present time the principal change in the light emission mechanisms of SiC after its electrochemical etching.