Novel surface cleaning of GaAs and formation of high quality SiN_x films by cat-CVD method

摘要

We proposed a novel surface cleaning technology of gaAs and formation of high quality silicon nitride (SiN_x) films by catalytic chemical vapor depositioon (cat-CVD) method. An H_2 or an NH_3 gas was used for the surfacecleaning of(100)GaAs without any chemical treatment. XPS measurements revealed obvious reductioon of intensities of oxygen related peaks of Ga(3d) and As(3d). Using a SiH_4 and NH_3 gas mixture, stoichiometric SiN_x films with low hydrogen content ere obtained under 300 deg C by this same method.