The distinctive characteristic of growth and radiation response of InP/InGaAs solar cells

摘要

Indium gallium arsenide (In_(0.53(Ga_(0.47)As) solar cells are of great interest due to the possibility of their use as bottom (infrared) cells in high-efficiency tandem solar cells with AlGaAs/GaAs or InP top cells and thermophotovoltaic coonverters. In this paper we describe experimental investigations of the effects of proton and electrn irradiation on heteroepitaxial inP/InGaAs cells. InGaAs/InP heterostructures were grown by liquid phase epitaxy. The distinctive property of InGaAs growth on undoped and doped substrate was studied. The effects of irradiations if InGaAs/InP solar cells with 1 MeV electron have been measured using illuminated current voltage measurements. The diffusion length damage coefficient K_L has also been calculated. The 1MeV electron damage coefficient decrease with fluence. The effects of the cells structure on the radiation response of this cell were considered in detail. This structure of the solar cell allows the use of lightly doped material n and p photoactive laers.