Thurn-on measurements of Silicon Carbide (SiC) thyristors are presented for the sirst time. The measurements are made on 4H-SiC npnp thyristors for a wide range of operating conditions. Comparisons with similar rated silicon and gallium arsenide thyristors show a superior rise time and pulsed turn-on performance of SiC thyristors. Time constant of current rise for a 400 V blocking voltage, 4 V foward drop (2.8 x 10~3 A/cm~2) SiC thyristor has been found to be of the order of 3-5 ns. Pulsed turn-on measurements show a residual voltage of only 50 V when a current desity of 10~5 A/cm~2 (35 A) was achieved in 20 ns.
展开▼
机译：给出了碳化硅（SiC）晶闸管的随动测量。在4H-SiC npnp晶闸管上针对各种工作条件进行测量。与同类额定硅和砷化镓晶闸管的比较表明，SiC晶闸管具有更高的上升时间和脉冲导通性能。对于400 V的阻断电压，正向下降4 V（2.8 x 10〜3 A / cm〜2）SiC晶闸管，电流上升的时间常数约为3-5 ns。脉冲导通测量表明，在20 ns内达到10〜5 A / cm〜2（35 A）的电流强度时，残留电压仅为50V。
展开▼
