Light-emitting diodes based on GaN

机译：基于GaN的发光二极管

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Electro-physical and luminescence properties of GaN(Zn,O) epitaxial lyayers and emitting-i-n-structues with active regions of this material have been investigated. Luminescence band 2.55eV with linear polarization up to 60

机译：研究了GaN（Zn，O）外延层和具有该材料有源区的发射i-n结构的电物理和发光特性。线性偏振光高达2.55eV的发光带

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来源
《Proceedings of the Twenty-Third International Symposium on Compound Semiconductors held in St Petersburg, Russia, 23-27 September 1996》|1996年|p.401-404|共4页
会议地点 St. Petersburg(RU);St. Petersburg(RU)
作者
A.G.Drizhuk; M.V.Zaitsev; V.G.Sidorov; D.V.Sidorov;
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正文语种 eng
中图分类无线电电子学、电信技术;
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2. High output power GaN-based light-emitting diodes using an electrically reverse-connected p-Schottky diode and p-InGaN-GaN superlattice [J] . Ja-Soon Jang Applied Physicsletters . 2008,第8期

机译：使用电反向连接的p-肖特基二极管和p-InGaN-GaN超晶格的高输出功率GaN基发光二极管
3. Improvement in the Characteristics of GaN-Based Light-Emitting Diodes by Inserting AlGaN-GaN Short-Period Superlattices in GaN Underlayers [J] . Cheng-Liang Wang, Jyh-Rong Gong, Ming-Fa Yeh, IEEE Photonics Technology Letters . 2006,第14期

机译：通过在GaN底层中插入AlGaN-GaN短周期超晶格来改善GaN基发光二极管的特性
4. Graphene on Ag films for reflectively conductive layer ohmic contacts to p-type GaN in GaN-based light-emitting diodes [C] . Lung-Chien Chen, Ching-Ho Tien, Min-Hsueh Chiang Twelfth International Conference on Solid State Lighting and Fourth International Conference on White LEDs and Solid State Lighting. . 2012

机译：Ag膜上的石墨烯，用于与GaN基发光二极管中的p型GaN形成反射导电层欧姆接触
5. Quantum efficiency enhancement for GaN based light-emitting diodes and vertical cavity surface-emitting lasers. [D] . Zhang, Fan. 2014

机译：GaN基发光二极管和垂直腔表面发射激光器的量子效率增强。
6. Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN [O] . Xiao-Long Hu, Hong Wang, Xi-Chun Zhang 2015

机译：无需预激活p型GaN的GaN基发光二极管的制造和表征
7. On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes [O] . Kyaw, Z., Zhang, Z. H., Liu, W., 2014

机译：关于InGaN / GaN发光二极管的n-GaN层中N-GaN / P-GaN / N-GaN / P-GaN / N-GaN内置结的影响

Light-emitting diodes based on GaN

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