首页> 外文会议>2018年第79回応用物理学会秋季学術講演会講演予稿集 >Observation of sharp emission lines in the photoluminescence spectrum of a Zn doped GaN Quantum well
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Observation of sharp emission lines in the photoluminescence spectrum of a Zn doped GaN Quantum well

机译:Zn掺杂GaN量子阱在光致发光光谱中观察到清晰的发射线

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Ⅲ-Nitride materials are finding much use in the realization of several solid state light emittingdevices such as high-performance lasers with low threshold current, and, of course, LEDs.Furthermore, quantum sources of light, such as single photon emitters, are currently being heavilyresearched. To date, Ⅲ-nitride QDs have been studied for such single photon emission, but otherpossible sources of Ⅲ-nitride based quantized emission have so far received little attention. Here,we report our attempts to isolate the emission from a single Zn dopant based emission center in GaNfor single photon emission in the blue visible region of the electromagnetic spectrum.
机译:Ⅲ-氮化物材料在实现几种固态发光中有很多用途 设备,例如具有低阈值电流的高性能激光器,当然还有LED。 此外,光的量子光源,例如单光子发射器,目前正在大量使用。 研究。迄今为止,已经针对这种单光子发射研究了Ⅲ族氮化物量子点,但其他 迄今为止,基于Ⅲ族氮化物的量化发射的可能来源很少受到关注。这里, 我们报告了我们试图将发射与GaN中单个基于Zn掺杂剂的发射中心隔离开来的尝试 用于电磁光谱的蓝色可见光区域中的单光子发射。

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