Rapid thermal annealing of arsenic implanted relaxed Si_1-xGe_x

摘要

The electrical activity and redistribution during rapid thermal annealing (RTA) of high concentrations of As implanted into epitaxially grown, relaxed Si_1-xGe_x for x<=0.5 have been studied as a function of composition x and RTA parameters. At a given RTA temperature the maximum carrier concentration decreases and the redistribution increases with increasing x. Maximum carrier concentrations and junction depths as a function of composition and RTA parameters are given.