A new method of rapid thermal annealing (RTA) in arsenic overpressure using a high thermal mass reactor and a very low thermal mass substrate holder has been developed. Efficient activation of Si implantation has been obtained only with proper As overpressure. The design of the substrate holder allowed a very uniform activation of the implanted layers as well as a negligible formation of dislocation slips. This method of rapid thermal annealing was successfully applied to the fabrication of broadband 4-8 GHz MMIC amplifiers.
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