Effect of forming gas anneals on the photoluminescence from nanocrystallien silicon formed by Si~+ implantation into SiO_2 matrix

机译：气体退火对Si〜+注入SiO_2基体形成的纳米晶硅光致发光的影响

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The blue region of the room temperature phtoluminescence spectrum from Si nanocrystallites formed in SiO_2 by Si~+ ion implantatio nahs been observed for the first itme after annealing in a forming gas (10

机译：在形成气体中退火后的第一个Ime观察到了通过Si〜+离子注入在SiO_2中形成的SiO_2中形成的Si纳米晶的室温光致发光光谱的蓝色区域（10

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《Proceedings of Symposium I on New Trends in Ion Beam Proceesing of Materials and Proceedings of Symposium K on Manometric Phenomena Induced by Laser, Ion and Cluster Beams of the 1996 E-Mrs Spring Conference Strasbourg, France, June 4-7, 1996》|1996年|p.93-96|共4页
会议地点 Strasbourg(FR);Strasbourg(FR)
作者
T.Komoda; J.Weber; K.P.Homewood; P.L.F.Hemment; B.J.Sealy;
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正文语种 eng
中图分类无线电电子学、电信技术;
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机译：通过负离子注入和后退火在硅衬底上形成接近于SiO_2膜底部的银纳米颗粒
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3. Formation of a broad photoluminescence band from Si~+-implanted SiO_2 films by varying the heating rate of rapid thermal annealing [J] . Ming-Yue Fu, Jen-Hwan Tsai, Cheng-Fu Yang Optical engineering . 2010,第7期

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4. Effect of the gas ambient on the intensity of the visible photoluminescence from Si microcrystallites in a SiO_2 matrix formed by ion implantation [C] . T.Komoda, J.P.Kelly, R.M.Gwilliam, Symposium J on correlated effects in atomic and cluster ion bombardment and implantation;Symposium C on pushing the limits of ion beam processing - from engineering to atomic scale issues;Symposium H on advanced deposition processes and characterization of protective coatings . 1996

机译：气体环境对通过离子注入形成的Si晶体中Si微晶的可见光致发光强度的影响
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7. Effect of post-implantation annealing on Al–N isoelectronic trap formation in silicon: Al–N pair formation and defect recovery mechanisms [O] . Takahiro Mori, Yukinori Morita, Takashi Matsukawa 2018

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8. Photoluminescence of silicon nanostructures formed by ion beam implantation [R] . Redman, DA, Follstaedt, D M, Guilinger, T, 1992

机译：通过离子束注入形成的硅纳米结构的光致发光

Effect of forming gas anneals on the photoluminescence from nanocrystallien silicon formed by Si~+ implantation into SiO_2 matrix

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