Structural, Electrical and Optical Properties of Zn1-xMgxO Films Prepared by Reactive DC Sputtering

摘要

Zn1-xMgxO thin films were prepared by reactive DC sputtering with Zn&Mg insetting target and ZnMg alloying target respectively for the first time. We compared the properties of Zn1-xMgxO thin films fabricated from the two targets. We studied the effect of oxygen content and postannealing on the properties of Zn1-xMgxO films. XRD, AFM, and spectrophotometer were used to measure the properties of Zn1-xMgxO films. From XRD patterns, we observed two diffraction peaks at around 34 °and 36 °corresponding to (0002) orientation of Zn1-xMgxO. Zn1-xMgxO films fabricated in our experiment were ZnO hexagonal structure, and Zn1-xMgxO films grown from ZnMg alloying target showed better preference to C axis, with larger grain size and rougher surface. Energy band gap (Eg) under different O2 content is 3.94 eV, 3.76 eV and 3.63 eV respectively. The process of annealing at 300 °C for lh helped the grain recrystallization, thus the grain size and the surface roughness increased as a result of this.