Interface Reaction Mechanism between ITO and SiNx in PECVD

摘要

ITO(SnO2 doped In2O3) is used as transparent electrode in LCD industries. In FFS mode, 2-layer ITO is needed, one of which is for pixel, and the other for common signal. Therefore, ITO is inevitably covered by SiNx, which is in high temperature PECVD process. This paper investigates the interface reaction mechanism between ITO and SiNx in PECVD. The radical containing H causes the reduction of ITO and rough surface, and finally the decrease of transmittance, which is called "cloudy mura". Lowering H radical in the plasma of PECVD is an effective way to prevent the mura.