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Soft-error tolerant design in near-threshold-voltage computing

机译:近阈值电压计算中的软容错设计

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摘要

In the advanced CMOS VLSI designs, lower supply voltage and smaller transistor lead to critical design challenges in dealing with soft-error interference, especial for the deisgn operating under near-threshold voltage. Some possible near-threshold voltage SEU-tolerant and SET-tolerant circuit design methods are discussed in this paper, such as robust C-element, Dual-Modular-Redundancy, Error-Correction with Duplication, and Error-Correction-with-shift-Timing-Output designs.
机译:在先进的CMOS VLSI设计中,较低的电源电压和较小的晶体管在处理软错误干扰方面带来了关键的设计挑战,特别是对于在接近阈值电压下工作的设计。本文讨论了一些可能的接近阈值电压SEU容忍和SET容忍的电路设计方法,例如鲁棒的C元素,双模块冗余,带复制的错误校正和带移位的错误校正时序输出设计。

著录项

  • 来源
  • 会议地点 Chiba(JP)
  • 作者单位

    Graduate Institute of Electrical Engineering, Electrical Engineering Department, Green Technology Research Center, and Centre for Reliability Sciences and Technologies, School of Electrical and Computer Engineering, College of Engineering, Chang Gung University, Taiwan;

    Graduate Institute of Electrical Engineering, Electrical Engineering Department, School of Electrical and Computer Engineering, College of Engineering, Chang Gung University, Taiwan;

    Graduate Institute of Electrical Engineering, Electrical Engineering Department, School of Electrical and Computer Engineering, College of Engineering, Chang Gung University, Taiwan;

    Graduate Institute of Electrical Engineering, Electrical Engineering Department, School of Electrical and Computer Engineering, College of Engineering, Chang Gung University, Taiwan;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Redundancy; Transistors; Robustness; Latches; Computer architecture; Electrical engineering; Tunneling magnetoresistance;

    机译:冗余;晶体管;坚固性;闩锁;计算机体系结构;电气工程;隧道磁阻;;

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